SURFACTANT MEDIATED EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS (001)

被引：74

作者：

MASSIES, J ^{[1
]}

GRANDJEAN, N ^{[1
]}

ETGENS, VH ^{[1
]}

机构：

[1] CTR UNIV ORSAY,MENJS,CEA,CNRS,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that Te can be used as a surfactant for the growth of highly strained InxGa1-xAs on GaAs(001). As observed by reflection high-energy electron diffraction analysis during growth, adsorption of Te on the GaAs surface prior to the growth of InxGa1-xAs drastically increases the layer thickness which can be grown in a two-dimensional layer-by-layer fashion. In analogy with the behavior of As and Sb as surfactant in the growth of Si/Ge [Copel, Reuter, Kaxiras, and Tromp, Phys. Rev. Lett. 63, 632 (1989)] Te is only slightly incorporated in the growing layer and floats at the surface.

引用

页码：99 / 101

页数：3

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