GROWTH OF HIGHLY STRAINED INGAAS ON GAAS

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 752 - 754

[2] BALL CAB, 1983, DISLOCATIONS SOLIDS, pCH27

[3] A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1162 - 1166

[4] THE EFFECT OF LATTICE MISMATCH ON THE DYNAMIC MICROSTRUCTURE OF III-V COMPOUND SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2007 - 2010

[5] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1004 - 1006

[6] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1080 - 1081

[7] GAL M, 1987, J APPL PHYS, V62, P3901

[8] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01): : 207 - 217

[9] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379

[10] HUBREGSTE J, 1987, 12TH P AUSTR C OPT F, P159

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 752 - 754

[2] BALL CAB, 1983, DISLOCATIONS SOLIDS, pCH27

[3] A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1162 - 1166

[4] THE EFFECT OF LATTICE MISMATCH ON THE DYNAMIC MICROSTRUCTURE OF III-V COMPOUND SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2007 - 2010

[5] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1004 - 1006

[6] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1080 - 1081

[7] GAL M, 1987, J APPL PHYS, V62, P3901

[8] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01): : 207 - 217

[9] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379

[10] HUBREGSTE J, 1987, 12TH P AUSTR C OPT F, P159