Disorder controlled hole transport in MEH-PPV

被引:55
作者
Inigo, AR
Chiu, HC
Fann, W
Huang, YS
Jeng, US
Lin, TL
Hsu, CH
Peng, KY
Chen, SA
机构
[1] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan
[2] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
[3] Natl Taiwan Univ, Inst Polymer Sci & Engn, Taipei, Taiwan
[4] Natl Taiwan Univ Sci 7 Technol, Dept Elect Engn, Taipei 106, Taiwan
[5] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan
[6] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 300, Taiwan
关键词
D O I
10.1103/PhysRevB.69.075201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2'ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.
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页数:8
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