Ferroelectric and leakage current behaviors of BiFeO3-Bi(Zn1/2Ti1/2)O3 ceramics

被引：6

作者：

Cho, J. H. ^{[1
]}

Song, T. K. ^{[1
]}

Wang, L. ^{[1
]}

Yeo, H. -G. ^{[1
]}

Sung, Y. -S. ^{[1
]}

Kim, M. -H. ^{[1
]}

Park, D. -S. ^{[2
]}

机构：

[1] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea

[2] Korea Inst Mat Sci, Funct Mat Div, Chang Won 641831, Gyeongnam, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 06期

关键词：

bismuth compounds; crystal microstructure; crystal structure; dielectric hysteresis; dielectric relaxation; doping; ferroelectric ceramics; leakage currents; permittivity; THIN-FILM HETEROSTRUCTURES; BIFEO3;

D O I：

10.1063/1.3081963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BiFeO3-Bi(Zn1/2Ti1/2)O-3 (BF-BZT) ceramics were made by a solid state reaction method. Crystal structure and microstructure were observed. Leakage currents were much reduced with BZT doping in BF. Dielectric constants of BF-BZT increased as frequency is decreased. Two distinctive relaxations were observed at about 500 kHz and 3 Hz. Ferroelectriclike hysteresis loops were observed in BF with low electric field and 2.5 and 5 mol % BZT doped ceramics.

引用

页数：3

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