Electronic passivation of 3C-SiC(001) via hydrogen treatment

被引：11

作者：

Coletti, C. ^{[1
]}

Frewin, C. L. ^{[1
]}

Hoff, A. M. ^{[1
]}

Saddow, S. E. ^{[1
]}

机构：

[1] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 10期

关键词：

D O I：

10.1149/1.2961590

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electronic passivation of single-crystal, atomically flat (001) surfaces of cubic silicon carbide (3C-SiC) was attempted via hydrogen annealing and HF exposure and investigated by monitoring the surface potentials of the treated samples. It was found that HF treatment causes a negative charging of the surface and that only hydrogen annealing is effective in producing well-passivated 3C-SiC. The degree and stability of the surface electronic passivation was dependent on the final hydrogen cooling temperature of the annealing process. Surface charge densities of the hydrogen-treated surfaces were calculated from the measured surface potentials and were found to be in the 10(10) cm(-2) range.

引用

页码：H285 / H287

页数：3

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