Power and linearity characteristics of field-plated recessed-gate AlGaN-GaNHEMTs

被引：83

作者：

Chini, A ^{[1
]}

Buttari, D ^{[1
]}

Coffie, R ^{[1
]}

Heikman, S ^{[1
]}

Chakraborty, A ^{[1
]}

Keller, S ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 05期

关键词：

GaN; high-electron mobility transistors (HEMTs); microwave power field-effect transistors (FETs);

D O I：

10.1109/LED.2004.826525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record power density and high-efficiency operation with AlGaN-GaN high-electron mobility transistor (HEMT) devices have been achieved by adopting a field-plated gate-recessed structure. Devices grown on SiC substrate yielded very high power density (18.8 W/mm with 43% power-added efficiency (PAE) as well as high efficiency (74% with 6 W/mm) under single-tone continuous-wave testing at 4 GHz. Devices also showed excellent linearity characteristics when measured under two-tone continuous-wave signals at 4 GHz. When biased in deep-class AB (33 mA/mm, 3% I-max) device maintained a carrier to third-order intermodulation ratio of 30 dBc up to a power level of 2.4 W/mm with 53% PAE; increasing bias current to 66 mA/mm (6% I-max) allowed high linear operation (45 dBc) up to a power level of 1.4 W/mm with 38% PAE.

引用

页码：229 / 231

页数：3

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