Influence of strain on the conduction band structure of strained silicon nanomembranes

被引：42

作者：

Euaruksakul, C. ^{[1
]}

Li, Z. W. ^{[1
]}

Zheng, F. ^{[1
]}

Himpsel, F. J. ^{[1
]}

Ritz, C. S. ^{[1
]}

Tanto, B. ^{[1
]}

Savage, D. E. ^{[1
]}

Liu, X. S. ^{[1
]}

Lagally, M. G. ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.101.147403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of in-plane biaxial strain on the conduction bands of Si is explored using elastically strained Si(001) nanomembranes and high- resolution x-ray absorption measurements with electron yield detection. The strain-induced splitting of the conduction band minimum and the energy shifts of two higher conduction bands near L(1) and L(3) are clearly resolved. The linear increase of the splitting of the conduction band minimum with increasing strain and the nonlinear shift of the L(1) point toward the conduction band minimum agree quantitatively with current theories.

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页数：4

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