Zn2SiO4/ZnO Core/Shell Coaxial Heterostructure Nanobelts Formed by an Epitaxial Growth
被引:10
作者:
Cheng, Baochang
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机构:
Nanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Peoples R ChinaNanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
Cheng, Baochang
[1
,2
]
Yu, Xiaoming
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机构:
Nanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Peoples R ChinaNanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
Yu, Xiaoming
[1
,2
]
Liu, Hongjuan
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机构:
Nanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Peoples R ChinaNanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
Liu, Hongjuan
[1
,2
]
Wang, Zhanguo
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机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaNanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
Wang, Zhanguo
[3
]
机构:
[1] Nanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
[2] Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Si-doped ZnO can be synthesized on the surface of the early grown Zn2SiO4 nanostructures and form core/ shell coaxial heterostructure nanobelts with an epitaxial orientation relationship. A parallel interface with a periodicity array of edge dislocations and an inclined interface without dislocations can be formed. The visible green emission is predominant in PL spectra due to carrier localization by high density of deep traps from complexes of impurities and defects. Due to band tail localization induced by composition and defect fluctuation, and high density of free-carriers donated by doping, especially the further dissociation of excitons into free-carriers at high excitation intensity, the near-band-edge emission is dominated by the transition of free-electrons to free-holes, and furthermore, exhibits a significant excitation power-dependent red-shift characteristic. Due to the structure relaxation and the thermalization effects, carrier delocalization takes place in deep traps with increasing excitation density. As a result, the green emission passes through a maximum at 0.25I(0) excitation intensity, and the ratio of the violet to green emission increases monotonously as the excitation laser power density increases. The violet and green emission of ZnO nanostructures can be well tuned by a moderate doping and a variation in the excitation density.
机构:
Bar Ilan Univ, Dept Chem, Kanbar Lab Nanomat, Bar Ilan Univ Ctr Adv Mat & Nanotechnol, IL-52900 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, Kanbar Lab Nanomat, Bar Ilan Univ Ctr Adv Mat & Nanotechnol, IL-52900 Ramat Gan, Israel
Bhattacharyya, Sayan
;
Gedanken, Aharon
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Bar Ilan Univ, Dept Chem, Kanbar Lab Nanomat, Bar Ilan Univ Ctr Adv Mat & Nanotechnol, IL-52900 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, Kanbar Lab Nanomat, Bar Ilan Univ Ctr Adv Mat & Nanotechnol, IL-52900 Ramat Gan, Israel
Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden
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Department of Physics, Chemistry and Biology, Linköping UniversityDepartment of Physics, Chemistry and Biology, Linköping University
Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden
;
不详
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Department of Materials Science and Engineering, University of Florida, GainesvilleDepartment of Physics, Chemistry and Biology, Linköping University
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SVT Associates, Eden PrairieDepartment of Physics, Chemistry and Biology, Linköping University
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Cheng, BC
;
Wang, ZG
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Hao, YF
;
Meng, GW
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Meng, GW
;
Ye, CH
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Ye, CH
;
Zhang, LD
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
机构:
Bar Ilan Univ, Dept Chem, Kanbar Lab Nanomat, Bar Ilan Univ Ctr Adv Mat & Nanotechnol, IL-52900 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, Kanbar Lab Nanomat, Bar Ilan Univ Ctr Adv Mat & Nanotechnol, IL-52900 Ramat Gan, Israel
Bhattacharyya, Sayan
;
Gedanken, Aharon
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Bar Ilan Univ, Dept Chem, Kanbar Lab Nanomat, Bar Ilan Univ Ctr Adv Mat & Nanotechnol, IL-52900 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, Kanbar Lab Nanomat, Bar Ilan Univ Ctr Adv Mat & Nanotechnol, IL-52900 Ramat Gan, Israel
Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden
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Department of Physics, Chemistry and Biology, Linköping UniversityDepartment of Physics, Chemistry and Biology, Linköping University
Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden
;
不详
论文数: 0引用数: 0
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机构:
Department of Materials Science and Engineering, University of Florida, GainesvilleDepartment of Physics, Chemistry and Biology, Linköping University
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;
不详
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机构:
SVT Associates, Eden PrairieDepartment of Physics, Chemistry and Biology, Linköping University
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Cheng, BC
;
Wang, ZG
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机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Hao, YF
;
Meng, GW
论文数: 0引用数: 0
h-index: 0
机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Meng, GW
;
Ye, CH
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Ye, CH
;
Zhang, LD
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China