Impact of intrinsic channel resistance on noise performance of CMOS LNA

被引：19

作者：

Chen, JW ^{[1
]}

Shi, BX ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 01期

关键词：

channel resistance; CMOS; low noise amplifier; noise figure; RF;

D O I：

10.1109/55.974804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Channel resistance cannot be neglected for CMOS circuits that operate at radio frequency (RF), especially for low noise amplifier (LNA), which is a very important block in CMOS RF transceiver. The impact of channel resistance on the noise performance of LNA is thoroughly studied and analyzed and new formulas are proposed systematically in this letter. Furthermore, revised noise figure optimization technique is discussed. Simulation results are also proposed. All of this work will be very instructive for the design of high-performance LNA.

引用

页码：34 / 36

页数：3

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