Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

被引：7

作者：

Seaford, ML ^{[1
]}

Hesse, PJ ^{[1
]}

Tomich, DH ^{[1
]}

Eyink, KG ^{[1
]}

机构：

[1] USAF, Res Lab, Mat & Mfg Directorate, MLPO, Wright Patterson AFB, OH 45433 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 07期

基金：

中国国家自然科学基金;

关键词：

compliant substrates; GaAs; strain relief;

D O I：

10.1007/s11664-999-0213-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using solid source molecular beam epitaxy (MBE) of gallium antimonide (GaSb) and indium antimonide (InSb), we have demonstrated(1) the ability to grow dislocation free lattice mismatched materials on gallium arsenide (GaAs) substrates formed by a twist bonding process. Lo et al.(2) proposed that it would be possible to create a compliant universal substrate capable of allowing the epitaxial growth of lattice mismatched materials without dislocations.

引用

页码：878 / 880

页数：3

共 7 条

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[7]

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