CONVERSION OF A DOUBLE CRYSTAL DIFFRACTOMETER TO A HIGH-RESOLUTION TRIPLE CRYSTAL DIFFRACTOMETER

被引：7

作者：

MATYI, RJ

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1992年 / 63卷 / 12期

关键词：

D O I：

10.1063/1.1143387

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The conversion of a commercial double crystal x-ray diffractometer to a flexible, high-resolution triple crystal diffractometer is described. This conversion, which has been accomplished at low cost, greatly enhances the flexibility of a double crystal diffractometer for the characterization of both highly perfect and relatively imperfect bulk single crystals and epitaxial layers. The conversion is easily reversible, thus allowing a single double crystal diffractometer to operate in either a double crystal or triple crystal mode. Specific examples of the capabilities of this instrument are presented.

引用

收藏

页码：5591 / 5596

页数：6

相关论文

共 18 条

[1] SCATTERING OF X-RAYS FROM CRYSTAL-SURFACES [J].

ANDREWS, SR ;

COWLEY, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (35) :6427-6439

[2] CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J].

BARTELS, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :338-345

[3] Theory of the use of more than two successive x-ray crystal reflections to obtain increased resolving power [J].

DuMond, JWM .

PHYSICAL REVIEW, 1937, 52 (08) :0872-0883

[4] COMBINING HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY AND TOPOGRAPHY [J].

FEWSTER, PF .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1991, 24 :178-183

[5] A HIGH-RESOLUTION MULTIPLE-CRYSTAL MULTIPLE-REFLECTION DIFFRACTOMETER [J].

FEWSTER, PF .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1989, 22 :64-69

[6]

FEWSTER PF, 1991, APPL SURF SCI, P9

[7] SEPARATE MEASUREMENTS OF DYNAMICAL AND KINEMATICAL X-RAY DIFFRACTIONS FROM SILICON-CRYSTALS WITH A TRIPLE CRYSTAL DIFFRACTOMETER [J].

IIDA, A ;

KOHRA, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02) :533-542

[8] A COMBINATION OF HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY AND DIFFRACTION IMAGING TECHNIQUES APPLIED TO THE STUDY OF MOVPE-GROWN CDXHG1-XTE/CDTE ON GAAS [J].

KEIR, AM ;

BARNETT, SJ ;

GIESS, J ;

WALSH, TD ;

ASTLES, MG .

APPLIED SURFACE SCIENCE, 1991, 50 (1-4) :103-108

[9] CHARACTERIZATION OF PROCESS-INDUCED DEFECTS IN SILICON WITH TRIPLE-CRYSTAL DIFFRACTOMETRY [J].

LOMOV, AA ;

ZAUMSEIL, P ;

WINTER, U .

ACTA CRYSTALLOGRAPHICA SECTION A, 1985, 41 (MAY) :223-227

[10]

LOXLEY N, 1991, MATER RES SOC SYMP P, V208, P107