Dedicated fabrication of silicon-based ensembles of dot molecules with a specific and unique number of dots

被引:4
作者
Hanke, M
Boeck, T
Gerlitzke, AK
Syrowatka, F
Heyroth, F
机构
[1] Univ Halle Wittenberg, Fachbereich Phys, D-06120 Halle, Germany
[2] Inst Kristallzuchtung, D-12489 Berlin, Germany
[3] Interdisziplinares Zentrum Mat Wissensch, D-06120 Halle, Germany
关键词
D O I
10.1063/1.2173216
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have performed a two-step liquid phase epitaxy yielding ensembles of SiGe/Si(001) dot molecules with a specific and unique number of dots. An undersaturation of the initial bismuth solution causes strain-induced pits in the epitaxial Si0.985Ge0.015 layer which are effectively preserved during subsequent Si0.68Ge0.32 dot growth at considerably lower temperatures. Since the latter process happens extremely close to thermodynamic equilibrium, we are able to interrupt it after the formation of ensembles of dimers, trimers or quadruplets, respectively. The crosslike ensemble symmetry is discussed in terms of strain energy distribution as revealed by finite element calculations.
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页数:3
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