Hierarchical self-assembly of epitaxial semiconductor nanostructures

被引:38
作者
Gray, JL
Atha, S
Hull, R [1 ]
Floro, JA
机构
[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1021/nl048443e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We describe a new route to hierarchical assembly of semiconductor nanostructures, employing guided organization of self-assembling epitaxial quantum dot molecules in the GexSi1-x/Si(100) system. The quantum dot molecule comprises a shallow strain relieving pit, defined by {105} facets, and bounded by 4-fold {105}-faceted islands. Through topographic "forcing functions" fabricated on the substrate surface, the quantum dot molecules may be organized into arrays, enabling hierarchical structures spanning length scales from tens of nanometers; to macroscopic dimensions.
引用
收藏
页码:2447 / 2450
页数:4
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