Equilibrium shape of SiGe Stranski-Krastanow islands on silicon grown by liquid phase epitaxy

被引：21

作者：

Hanke, M

Schmidbauer, M

Köhler, R

Syrowatka, F

Gerlitzke, AK

Boeck, T

机构：

[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

[2] Interdisziplinares Zentrum Mat Wissensch, D-06120 Halle An Der Saale, Germany

[3] Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 25期

关键词：

D O I：

10.1063/1.1759070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiGe Stranski-Krastanow islands coherently grown on Si(001) substrates by liquid phase epitaxy are typically made of truncated pyramids with {111} side facets, whereas the persistent presence of an (001) top facet indicates an energetical disadvantage of complete pyramids compared to truncated ones. We attribute this to a surface minimization process during the island evolution under the assumption of isotropically distributed surface energies and stable island facets. For the presence of {111} side facets we have theoretically derived a final geometrical aspect ratio of island base versus island height of 1.96, which is in excellent agreement with the experimentally derived averaged value of 2.08+/-0.10 within a concentration window between 9% and 30% germanium. (C) 2004 American Institute of Physics.

引用

页码：5228 / 5230

页数：3

共 19 条

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