SiGe/Si(001) Stranski-Krastanow islands by liquid-phase epitaxy:: Diffuse x-ray scattering versus growth observations -: art. no. 075317

被引:32
作者
Hanke, M
Schmidbauer, M
Grigoriev, D
Raidt, H
Schäfer, P
Köhler, R
Gerlitzke, AK
Wawra, H
机构
[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
[2] Inst Kristallzuchtung, D-12489 Berlin, Germany
来源
PHYSICAL REVIEW B | 2004年 / 69卷 / 07期
关键词
D O I
10.1103/PhysRevB.69.075317
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ex situ observed growth stages of LPE-SiGe/Si(001) Stranski-Krastanow islands with a germanium content of 10% give clear evidence of a rapid shape transition at one third of the final island height. The island shape changes from a lenslike type without a top facet to truncated pyramids with {111} side facets and an (001) top facet. High-resolution x-ray diffraction has been applied to islands with higher germanium content of about 30%. Experimental results are compared with respective kinematical scattering simulations based on finite element calculations for the strain field. From these simulations the three-dimensional germanium composition profile inside the islands can be extracted and it substantiates a similar growth scenario with a distinct shape transition at one third of the final island height also for this germanium concentration range. We attribute the observed finite island size to a distinct nucleation problem at the island bottom caused by exceptional high strain energy around the island corners in combination with a strain driven wetting layer depression.
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