Strain and composition in self-assembled SiGe islands by Raman spectroscopy

被引：28

作者：

Cazayous, M

Groenen, J

Demangeot, F

Sirvin, R

Caumont, M

Remmele, T

Albrecht, M

Christiansen, S

Becker, M

Strunk, HP

Wawra, H

机构：

[1] Univ Toulouse 3, Phys Solides Lab, UMR 5477, F-31062 Toulouse 4, France

[2] Univ Erlangen Nurnberg, Inst Werkstoffwissensch Mikrocharakterisierung, D-91058 Erlangen, Germany

[3] Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 10期

关键词：

D O I：

10.1063/1.1469200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated self-assembled Si1-xGex islands grown on Si (001). We show that the average composition and both the epsilon(xx) and epsilon(zz) average strain components can be derived from Raman scattering spectra. Both nm-sized and mum-sized islands are investigated. The experimental results are compared successfully with finite-element strain simulations. Raman scattering is shown to be a versatile and reliable tool for investigating capped and uncapped islands. It is shown that strain profiles in mum-sized islands can be obtained by means of micro-Raman. (C) 2002 American Institute of Physics.

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页码：6772 / 6774

页数：3

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