Strain distribution and optical phonons in InAs/InP self-assembled quantum dots

被引：37

作者：

Groenen, J

Priester, C

Carles, R

机构：

[1] Univ Toulouse 3, Phys Solides Lab, F-31062 Toulouse 4, France

[2] IEMN, Dept ISEN, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.60.16013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The strain distribution in self-assembled InAs/InP (001) quantum dots is calculated, using an atomistic valence force-field description. Two typical dot shapes are considered, Strain relaxation is found to depend much on the dot shape. From these modeling results we deduce the strain-induced phonon frequency shifts. Unlike confinement, strain induces large frequency shifts. The calculations agree well with experimental results obtained by Raman scattering, It is shown that alloying effects are small. Finally, we show that average strain values can be obtained experimentally if one combines longitudinal and transverse optical-phonon Raman scattering. [S0163-1829(99)10347-3].

引用

页码：16013 / 16017

页数：5

共 34 条

[1] RAMAN AND INFRARED PHONON PIEZOSPECTROSCOPY IN INP [J].

ANASTASSAKIS, E ;

RAPTIS, YS ;

HUNERMANN, M ;

RICHTER, W ;

CARDONA, M .

PHYSICAL REVIEW B, 1988, 38 (11) :7702-7709

[2]

ANDROUSSI Y, 1995, MATER RES SOC SYMP P, V355, P569

[3] DEPENDENCE OF RAMAN FREQUENCIES AND SCATTERING INTENSITIES ON PRESSURE IN GASB, INAS, AND INSB SEMICONDUCTORS [J].

AOKI, K ;

ANASTASSAKIS, E ;

CARDONA, M .

PHYSICAL REVIEW B, 1984, 30 (02) :681-687

[4] Raman scattering of InSb quantum dots grown on InP substrates [J].

Armelles, G ;

Utzmeier, T ;

Postigo, PA ;

Briones, F ;

Ferrer, JC ;

Peiro, P ;

Cornet, A .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6339-6342

[5] Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy [J].

Benabbas, T ;

Francois, P ;

Androussi, Y ;

Lefebvre, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (05) :2763-2767

[6]

Bennett BR, 1996, APPL PHYS LETT, V68, P958, DOI 10.1063/1.116111

[7] RAMAN-SCATTERING IN INP1-XASX ALLOYS [J].

CARLES, R ;

SAINTCRICQ, N ;

RENUCCI, JB ;

NICHOLAS, RJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (05) :899-910

[8] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].

CERDEIRA, F ;

BUCHENAUER, CJ ;

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+

[9] THEORY OF ONE-PHONON RAMAN-SCATTERING IN SEMICONDUCTOR MICROCRYSTALLITES [J].

CHAMBERLAIN, MP ;

TRALLEROGINER, C ;

CARDONA, M .

PHYSICAL REVIEW B, 1995, 51 (03) :1680-1693

[10] STRAINED STATE OF GE(SI) ISLANDS ON SI - FINITE-ELEMENT CALCULATIONS AND COMPARISON TO CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENTS [J].

CHRISTIANSEN, S ;

ALBRECHT, M ;

STRUNK, HP ;

MAIER, HJ .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3617-3619

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