Probing the lateral composition profile of self-assembled islands

被引：113

作者：

Denker, U ^{[1
]}

Stoffel, M ^{[1
]}

Schmidt, OG ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.90.196102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We apply a selective etching procedure to probe the lateral composition profile of self-assembled SiGe pyramids on a Si(001) substrate surface. We find that the pyramids consist of highly Si intermixed corners, whereas the edges, the apex, and the center of the pyramids remain Ge rich. Our results cannot be explained by existing growth models that minimize strain energy. We use a model that includes surface interdiffusion during island growth, underlining the paramount importance of surface processes during the formation of self-assembled quantum dot heterostructures in many different material systems.

引用

页数：4

共 22 条

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