Hybrid circuit simulator including a model for single electron tunneling devices

被引:42
作者
Kirihara, M [1 ]
Nakazato, K [1 ]
Wagner, M [1 ]
机构
[1] Hitachi Cambridge Lab, Cavendish Lab, Cambridge CB3 0HE, England
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 4A期
关键词
single electron; Coulomb blockade; hybrid circuli simulator; master equation; SPICE;
D O I
10.1143/JJAP.38.2028
中图分类号
O59 [应用物理学];
学科分类号
摘要
A hybrid circuit simulator has been developed that incorporates elements of single electron devices into the conventional circuit simulator SPICE (Simulation Program with Integrated Circuit Emphasis). The elements can consist of an arbitrary network of tunnel junctions and capacitors, whose characteristics are calculated using a master equation method. By employing the hybrid circuit simulator, we studied a turnstile device feeding the input of a complementary metal-oxide-semiconductor (CMOS) inverter, and were able to more successfully demonstrate the transfer of electrons through the turnstile one by one in SPICE.
引用
收藏
页码:2028 / 2032
页数:5
相关论文
共 17 条
[11]   FREQUENCY-LOCKED TURNSTILE DEVICE FOR SINGLE ELECTRONS [J].
GEERLIGS, LJ ;
ANDEREGG, VF ;
HOLWEG, PAM ;
MOOIJ, JE ;
POTHIER, H ;
ESTEVE, D ;
URBINA, C ;
DEVORET, MH .
PHYSICAL REVIEW LETTERS, 1990, 64 (22) :2691-2694
[12]   ACCURACY OF THE ELECTRON PUMP [J].
JENSEN, HD ;
MARTINIS, JM .
PHYSICAL REVIEW B, 1992, 46 (20) :13407-13427
[13]  
Kirihara M, 1998, IEICE T ELECTRON, VE81C, P57
[14]   SIMULATION OF SINGLE-ELECTRON LOGIC-CIRCUITS [J].
KUWAMURA, N ;
TANIGUCHI, K ;
HAMAGUCHI, C .
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1994, 77 (09) :65-73
[15]   Coulomb blockade effects in edge quantum wire SOI MOSFETs [J].
Ohata, A ;
Toriumi, A ;
Uchida, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1686-1689
[16]   A silicon Coulomb blockade device with voltage gain [J].
Smith, RA ;
Ahmed, H .
APPLIED PHYSICS LETTERS, 1997, 71 (26) :3838-3840
[17]   SIMON - A simulator for single-electron tunnel devices and circuits [J].
Wasshuber, C ;
Kosina, H ;
Selberherr, S .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1997, 16 (09) :937-944