Effect of hydrogen on morphological changes in columnar structure of GaN grown by ECR-MBE

被引：5

作者：

Araki, T ^{[1
]}

Onogi, A ^{[1
]}

Juni, N ^{[1
]}

Nanishi, Y ^{[1
]}

机构：

[1] Ritsumeikan Univ, Dept Photon, Shiga 5258577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

关键词：

crystal morphology; growth models; nanostructures; molecular beam epitaxy; nitrides;

D O I：

10.1016/S0022-0248(01)02112-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate the effect of hydrogen on morphological changes in GaN columns grown by electron cyclotron-resonance plasma-excited molecular beam epitaxy on sapphire (0 0 0 1) substrates. In GaN growth with a hydrogen flow of 6 seem, hexagonal columnar structure was obtained. Morphological changes of the GaN columns from hexagonal to triangle were observed by increasing the hydrogen flow rate. It is considered to be caused by preferential growth along three of the six [10 (1) over bar 10] directions, The surface of the triangle columns consisted of {10 (1) over bar3} and {10 (1) over bar1} faceted planes, Formation mechanism of the triangle columnar structure is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：983 / 987

页数：5

共 11 条

[1] Structural characterization of GaN grown by hydrogen-assisted ECR-MBE using electron microscopy [J].