Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy

We report the measurement of carrier concentration and mobility of metalorganic chemical vapor deposited GaN thin films on the sapphire substrate by an infrared reflection technique. By fitting with the experimental data we obtain all the parameters of the lattice vibration oscillators and of the plasmon. From the plasmon frequency and the damping constant we have derived the carrier concentration and the electron mobility. The concentration agrees with the Hall data very well while the mobility values are smaller than that of the Hall measurement by a factor of about 0.5. We attribute such mobility lowering to the increase of scattering for the electrons coupling with the incident photons. (C) 1999 American Institute of Physics. [S0021-8979(99)01617-5].