Excitons in electrostatic traps

被引：81

作者：

Hammack, AT ^{[1
]}

Gippius, NA

Yang, S

Andreev, GO

Butov, LV

Hanson, M

Gossard, AC

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1063/1.2181276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trapping of indirect excitons in electrostatic traps. (c) 2006 American Institute of Physics.

引用

页数：3

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