Contact resistance and shot noise in graphene transistors

被引：92

作者：

Cayssol, J. ^{[1
]}

Huard, B. ^{[2
,3
]}

Goldhaber-Gordon, D. ^{[2
]}

机构：

[1] Univ Bordeaux, CPMOH, UMR 5798, F-33405 Talence, France

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[3] Ecole Normale Super, Dept Phys, Lab Pierre Aigrain, F-75231 Paris, France

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 07期

关键词：

ballistic transport; contact resistance; diffusion; field effect transistors; graphene; semiconductor device noise; shot noise; SCATTERING; DEVICES;

D O I：

10.1103/PhysRevB.79.075428

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene field effect transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.

引用

页数：6

共 36 条

[1] Berry's phase and absence of back scattering in carbon nanotubes [J].

Ando, T ;

Nakanishi, T ;

Saito, R .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1998, 67 (08) :2857-2862

[2] Carbon-based electronics [J].

Avouris, Phaedon ;

Chen, Zhihong ;

Perebeinos, Vasili .

NATURE NANOTECHNOLOGY, 2007, 2 (10) :605-615

[3] Colloquium: Andreev reflection and Klein tunneling in graphene [J].

Beenakker, C. W. J. .

REVIEWS OF MODERN PHYSICS, 2008, 80 (04) :1337-1354

[4] Transport through normal-metal-graphene contacts [J].

Blanter, Ya. M. ;

Martin, Ivar .

PHYSICAL REVIEW B, 2007, 76 (15)

[5] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[6] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[7] Selective transmission of Dirac electrons and ballistic magnetoresistance of n-p junctions in graphene [J].

Cheianov, Vadim V. ;

Fal'ko, Vladimir I. .

PHYSICAL REVIEW B, 2006, 74 (04)

[8] Charged-impurity scattering in graphene [J].

Chen, J. -H. ;

Jang, C. ;

Adam, S. ;

Fuhrer, M. S. ;

Williams, E. D. ;

Ishigami, M. .

NATURE PHYSICS, 2008, 4 (05) :377-381

[9] Shot noise in ballistic graphene [J].

Danneau, R. ;

Wu, F. ;

Craciun, M. F. ;

Russo, S. ;

Tomi, M. Y. ;

Salmilehto, J. ;

Morpurgo, A. F. ;

Hakonen, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 100 (19)

[10] Shot noise in graphene [J].

DiCarlo, L. ;

Williams, J. R. ;

Zhang, Yiming ;

McClure, D. T. ;

Marcus, C. M. .

PHYSICAL REVIEW LETTERS, 2008, 100 (15)

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