Imaging of laser-induced reactions of individual defect nanoclusters

被引：22

作者：

Demos, SG

Staggs, M

De Yoreo, JJ

Radousky, HB

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

[2] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA

来源：

OPTICS LETTERS | 2001年 / 26卷 / 24期

关键词：

D O I：

10.1364/OL.26.001975

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The response of individual defect nanoclusters located in the bulk of a dielectric material following exposure to 355-nm, 3-ns high-power laser irradiation is investigated by use of microscopic fluorescence imaging. Experiments were carried out on KH2PO4 crystals, We provide direct imaging of the reaction to an external stimulus of individual defect clusters and demonstrate a novel method of studying the dynamic behavior of bulk defects. (C) 2001 Optical Society of America.

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页码：1975 / 1977

页数：3

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