GaAs(001)-''2x3'' surface studied by scanning tunneling microscopy

被引：15

作者：

Chizhov, I ^{[1
]}

Lee, GS ^{[1
]}

Willis, RF ^{[1
]}

Lubyshev, D ^{[1
]}

Miller, DL ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.56.1013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy (STM) images of the arsenic-rich reconstruction of the GaAs(001) surface known as 2x3 an presented. It is shown that this surface does not have 2x3 symmetry but is composed of domains of 4x3 and c(4x6) unit cells. Analysis of the STM images indicates that occupied and unoccupied surface electronic states are localized at different sites within the 4x3 unit cell. A new structural model for the ''2x3'' reconstruction is proposed.

引用

页码：1013 / 1016

页数：4

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