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Widely tunable bottom-emitting vertical-cavity SOAs

被引：10
作者：
Cole, GD
Björlin, ES
Wang, CS
MacDonald, NC
Bowers, JE
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 12期
基金：
美国国家科学基金会;
关键词：
Fabry-Perot resonators; laser amplifiers; microelectromechanical (MEMS) devices; semiconductor optical amplifiers; surface-emitting lasers; tunable amplifiers; wafer bonding;
D O I：
10.1109/LPT.2005.859157
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present bottom-emitting tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) with an effective wavelength tuning range of > 20 nm. These devices utilize a high reflectivity micromechanically tunable Bragg mirror as the back reflector. Compared with our first generation tunable VCSOAs, the bottom-emitting devices exhibit a two-fold increase in the effective tuning range as well as a five-fold reduction in the required tuning voltage.
引用
收藏
页码：2526 / 2528
页数：3
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