X-ray rocking curve determination of twist and tilt angles in GaN films grown by an epitaxial-lateral-overgrowth technique

被引：46

作者：

Kobayashi, K

Yamaguchi, AA

Kimura, S

Sunakawa, H

Kimura, A

Usui, A

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 6AB期

关键词：

GaN; epitaxial lateral overgrowth; grazing incidence angle X-ray diffraction; twisting;

D O I：

10.1143/JJAP.38.L611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray rocking curve measurements have been carried out in order to investigate the twisting and tilting in hydride vapor phase epitaxy (HVPE) and metalorganic vapor phase epitaxy (MOVPE) GaN films fabricated by an epitaxial lateral overgrowth (ELO) technique. The twist angle is directly determined by means of grazing incidence angle X-ray diffraction. It is found that these angles in both MOVPE and HVPE films are significantly reduced by the ELO technique especially for the twist angles. In the MOVPE-ELO GaN film, the till and twist angles depend on the stripe direction of the mask pattern: which is closely related to the difference of the growth process.

引用

页码：L611 / L613

页数：3

共 11 条

[1] Amano H, 1998, MATER RES SOC SYMP P, V482, P479
[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[3] Kimura A, 1998, MATER RES SOC SYMP P, V482, P119
[4] LESTER SD, 1996, APPL PHYS LETT, V35, pL1315
[5] Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
Marchand, H
Wu, XH
Ibbetson, JP
Fini, PT
Kozodoy, P
Keller, S
Speck, JS
DenBaars, SP
Mishra, UK
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (06) : 747 - 749
[6] Metzger T, 1998, PHILOS MAG A, V77, P1013, DOI 10.1080/01418619808221225
[7] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
IWASA, N
NAGAHAMA, S
YAMADA, T
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1332 - L1335
[8] Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth
Sakai, A
Sunakawa, H
Usui, A
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (04) : 481 - 483
[9] Defect structure in selectively grown GaN films with low threading dislocation density
Sakai, A
Sunakawa, H
Usui, A
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (16) : 2259 - 2261
[10] TADATOMO K, 1999, J NITRIDE SEMICOND R

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