Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

被引：37

作者：

Hsu, L ^{[1
]}

Walukiewicz, W

机构：

[1] Univ Minnesota, Gen Coll, Minneapolis, MN 55455 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 14期

关键词：

D O I：

10.1063/1.1468260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have calculated ratios of the transport-to-quantum lifetimes tau(t)/tau(q) of the two-dimensional electron gas in AlGaN/GaN heterostructures at low temperatures. In contrast to conventional interpretations, we show that large values of this ratio do not necessarily indicate that long-range scattering mechanisms such as Coulomb scattering are the dominant carrier scattering mechanisms and that large ratios (>20) can be obtained even when short-range scattering mechanisms are dominant. (C) 2002 American Institute of Physics.

引用

收藏

页码：2508 / 2510

页数：3

相关论文

共 11 条

[1] Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements [J].

Braña, AF ;

Diaz-Paniagua, C ;

Batallan, F ;

Garrido, JA ;

Muñoz, E ;

Omnes, F .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (02) :932-937

[2] SINGLE-PARTICLE RELAXATION-TIME VERSUS SCATTERING TIME IN AN IMPURE ELECTRON-GAS [J].

DASSARMA, S ;

STERN, F .

PHYSICAL REVIEW B, 1985, 32 (12) :8442-8444

[3] Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire [J].

Dimitrov, R ;

Murphy, M ;

Smart, J ;

Schaff, W ;

Shealy, JR ;

Eastman, LF ;

Ambacher, O ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) :3375-3380

[4] High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates [J].

Frayssinet, E ;

Knap, W ;

Lorenzini, P ;

Grandjean, N ;

Massies, J ;

Skierbiszewski, C ;

Suski, T ;

Grzegory, I ;

Porowski, S ;

Simin, G ;

Hu, X ;

Khan, MA ;

Shur, MS ;

Gaska, R ;

Maude, D .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2551-2553

[5] SCATTERING TIME AND SINGLE-PARTICLE RELAXATION-TIME IN A DISORDERED TWO-DIMENSIONAL ELECTRON-GAS [J].

GOLD, A .

PHYSICAL REVIEW B, 1988, 38 (15) :10798-10811

[6] Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures [J].

Harris, JJ ;

Lee, KJ ;

Wang, T ;

Sakai, S ;

Bougrioua, Z ;

Moerman, I ;

Thrush, EJ ;

Webb, JB ;

Tang, H ;

Martin, T ;

Maude, DK ;

Portal, JC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (05) :402-405

[7] Effect of polarization fields on transport properties in AlGaN/GaN heterostructures [J].

Hsu, L ;

Walukiewicz, W .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) :1783-1789

[8] Electron mobility in AlxGa1-xN/GaN heterostructures [J].

Hsu, L ;

Walukiewicz, W .

PHYSICAL REVIEW B, 1997, 56 (03) :1520-1528

[9] LOW-TEMPERATURE TWO-DIMENSIONAL MOBILITY OF A GAAS HETEROLAYER [J].

PRICE, PJ .

SURFACE SCIENCE, 1984, 143 (01) :145-156

[10] Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy [J].

Smorchkova, IP ;

Elsass, CR ;

Ibbetson, JP ;

Vetury, R ;

Heying, B ;

Fini, P ;

Haus, E ;

DenBaars, SP ;

Speck, JS ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4520-4526