Stability of strained H:Si(105) and H:Ge(105) surfaces

被引：10

作者：

Ciobanu, CV ^{[1
]}

Briggs, RM ^{[1
]}

机构：

[1] Colorado Sch Mines, Div Engn, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

关键词：

D O I：

10.1063/1.2191735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report atomic scale studies of the effect of applied strain and hydrogen environment on the reconstructions of the (105) Si and Ge surfaces. Surface energy calculations for monohydride-terminated (001) and (105) reconstructions reveal that the recently established single-height rebonded model is unstable not only with respect to (001) but also in comparison with other monohydride (105) structures. This finding persists for both Si and Ge, for applied biaxial strains from -4% to 4%, and for nearly the entire relevant domain of the chemical potential of hydrogen, thus providing thermodynamic arguments for the experimentally observed H-induced destabilization of the Ge/Si(105) surface.

引用

收藏

页数：3

相关论文

共 23 条

[1] Reconstruction of silicon surfaces: A stochastic optimization problem [J].

Ciobanu, CV ;

Predescu, C .

PHYSICAL REVIEW B, 2004, 70 (08) :085321-1

[2] Structure and stability of the Si(105) surface [J].

Ciobanu, CV ;

Shenoy, VB ;

Wang, CZ ;

Ho, KM .

SURFACE SCIENCE, 2003, 544 (2-3) :L715-L721

[3]

Fujikawa Y, 2005, PHYS REV LETT, V94, DOI [10.1103/PhysRevLett.94.086105, 10.1103/PhysRevLett.086105]

[4] Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation [J].

Fujikawa, Y ;

Akiyama, K ;

Nagao, T ;

Sakurai, T ;

Lagally, MG ;

Hashimoto, T ;

Morikawa, Y ;

Terakura, K .

PHYSICAL REVIEW LETTERS, 2002, 88 (17) :4-176101

[5]

Fujino T, 2002, JPN J APPL PHYS 2, V41, pL790, DOI [10.1143/JJAP.41.L790, 10.1143/JJAP.411.L790]

[6] Hydrogen segregation and its detrimental effect in epitaxial growth of Ge thin film on hydrogen-terminated Si(001) surface [J].

Fujino, T ;

Okuno, T ;

Katayama, M ;

Oura, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (11A) :L1173-L1175

[7] Rebonded SB step model of Ge/Si(105)1 x 2:: A first-principles theoretical study [J].

Hashimoto, T ;

Morikawa, Y ;

Fujikawa, Y ;

Sakurai, T ;

Lagally, MG ;

Terakura, K .

SURFACE SCIENCE, 2002, 513 (03) :L445-L450

[8] Hydrogen-surfactant mediated growth of Ge on Si(001) [J].

Kahng, SJ ;

Ha, YH ;

Park, JY ;

Kim, S ;

Moon, DW ;

Kuk, Y .

PHYSICAL REVIEW LETTERS, 1998, 80 (22) :4931-4934

[9] Surface morphology and quantum dot self-assembly in growth of strained-layer semiconducting films [J].

Khor, KE ;

DasSarma, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1051-1055

[10] Molecules for materials:: Germanium hydride neutrals and anions.: Molecular structures, electron affinities, and thermochemistry of GeHn/GeH-n (n=0-4) and Ge2Hn/Ge2H-n (n=0-6) [J].

Li, QS ;

Lü, RH ;

Xie, YM ;

Schaefer III, HF .

JOURNAL OF COMPUTATIONAL CHEMISTRY, 2002, 23 (16) :1642-1655