Hydrogen segregation and its detrimental effect in epitaxial growth of Ge thin film on hydrogen-terminated Si(001) surface

被引：7

作者：

Fujino, T ^{[1
]}

Okuno, T ^{[1
]}

Katayama, M ^{[1
]}

Oura, K ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 11A期

关键词：

ion scattering spectroscopy; elastic recoil detection analysis; silicon; germanium; hydrogen surfactant;

D O I：

10.1143/JJAP.40.L1173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed real-time monitoring of Ge thin film growth on a hydrogen-terminated Si(001) surface at growth temperatures ranging from room temperature to 350 degreesC, to clarify the influence of hydrogen atoms on Ge/Si(001) heteroepitaxy. Hydrogen atoms segregated to the surface and a portion of them desorbed from the growth front during Ge deposition, depending on the growth temperature. The existence of hydrogen atoms on the growth front increased the growth temperature for Ge/Si(001) heteroepitaxy, while the flatness of the deposited Ge thin film was improved, indicating that hydrogen atoms suppress the surface migration of deposited Ge atoms.

引用

页码：L1173 / L1175

页数：3

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