In situ monitoring of hydrogen-surfactant effect during Ge growth on Si(001) using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis

被引：3

作者：

Fujino, T ^{[1
]}

Fuse, T ^{[1
]}

Tazou, E ^{[1
]}

Nakano, T ^{[1
]}

Inudzuka, K ^{[1
]}

Goto, K ^{[1
]}

Yamazaki, Y ^{[1
]}

Katayama, M ^{[1
]}

Oura, K ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷

关键词：

ion scattering spectroscopy; elastic recoil detection analysis; silicon; germanium; hydrogen; surfactant;

D O I：

10.1016/S0168-583X(99)00777-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

To clarify the mechanism of the hydrogen (H)-surfactant effect, we have performed in situ monitoring of the H-surfactant-mediated growth of Ge on Si(0 0 1), using coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA). It has been revealed that: (1) at a growth temperature of 350 degrees C, the Ge overlayer of the best quality could be achieved with an optimal flux density of H, and (2) above 350 degrees C, most of the adsorbed H atoms desorb from the growth front. The latter result indicates that the residence time of H atom on the growth front is an important factor for the surfactant effect. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：419 / 423

页数：5

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