Alternating Conjugated Electron Donor-Acceptor Polymers Entailing Pechrnann Dye Framework as the Electron Acceptor Moieties for High Performance Organic Semiconductors with Tunable Characteristics

被引:63
作者
Cai, Zhengxu [1 ]
Luo, Hewei [1 ]
Qi, Penglin [1 ]
Wang, Jianguo [1 ]
Zhang, Guanxin [1 ]
Liu, Zitong [1 ]
Zhang, Deqing [1 ]
机构
[1] Chinese Acad Sci, CAS Key Lab Organ Solids, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; N-TYPE; HIGH HOLE; PECHMANN DYES; MOBILITY; CHANNEL; COPOLYMER; DIIMIDE; TRANSPORT;
D O I
10.1021/ma5003694
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
In this paper, we report the design, synthesis and semiconducting behavior of two conjugated D-A polymers P-BPDTT and P-BPDBT which entail BPD, a Pechmann dye framework, as electron accepting moieties, and thieno[3,2-b]thiophene and 2,2'-bithiophene as electron donating moieties. Their HOMO/LUMO energies and bandgaps were estimated based on the respective cyclic voltammgrams and absorption spectra of thin films. P-BPDTT possesses lower LUMO level and narrower bandgap than P-BPDBT. On the basis of the characterization of the field-effect transistors, a thin film of P-BPDTT exhibits ambipolar semiconducting properties with hole and electron mobilities reaching 1.24 cm(2) V-1 s(-1) and 0.82 cm(2) V-1 s(-1), respectively, after thermal annealing. In comparison, thin film of P-BPDBT only shows p-type semiconducting behavior with hole mobility up to 1.37 cm(2) V-1 s(-1). AFM and XRD studies were presented to understand the interchain arrangements on the substrates and the variation of carrier mobilities.
引用
收藏
页码:2899 / 2906
页数:8
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