Raman scattering of disordered SiC

被引：17

作者：

Nakashima, S

Kisoda, K

Niizuma, H

Harima, H

机构：

[1] Department of Applied Physics, Osaka University, Suita, Osaka 565

来源：

PHYSICA B-CONDENSED MATTER | 1996年 / 219-20卷

关键词：

D O I：

10.1016/0921-4526(95)00748-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured Raman scattering from SiC crystals containing stacking disorders. Raman intensity profiles are calculated for models of disordered structures and compared with the observed spectra.

引用

页码：371 / 373

页数：3

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