High mobility electron-conducting thin-film transistors by organic vapor phase deposition

被引:23
作者
Rolin, C. [1 ,2 ]
Vasseur, K. [1 ,3 ]
Schols, S. [1 ,4 ]
Jouk, M. [1 ,5 ]
Duhoux, G. [1 ,4 ]
Mueller, R. [1 ]
Genoe, J. [1 ]
Heremans, P. [1 ,4 ]
机构
[1] IMEC VZW, B-3001 Louvain, Belgium
[2] Catholic Univ Louvain, PCPM, B-1348 Louvain, Belgium
[3] Katholieke Univ Leuven, NTM Dept, B-3001 Louvain, Belgium
[4] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium
[5] CNRS, CRHEA, F-06560 Valbonne, France
关键词
D O I
10.1063/1.2958229
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we report on the growth of thin films of N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59 +/- 4% and deposition rates up to 15 angstrom/s. Top-contact transistors based on OVPD-grown PTCDI-C13H27 show high n-type mobilities (up to 0.3 cm(2)/V s) and reproducible characteristics. The influence of deposition parameters on electrical properties is discussed. (C) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 20 条
[1]  
Baldo M, 1998, ADV MATER, V10, P1505, DOI 10.1002/(SICI)1521-4095(199812)10:18<1505::AID-ADMA1505>3.0.CO
[2]  
2-G
[3]   High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene [J].
Chesterfield, RJ ;
Newman, CR ;
Pappenfus, TM ;
Ewbank, PC ;
Haukaas, MH ;
Mann, KR ;
Miller, LL ;
Frisbie, CD .
ADVANCED MATERIALS, 2003, 15 (15) :1278-+
[4]   Organic thin film transistors based on N-alkyl perylene diimides:: Charge transport kinetics as a function of gate voltage and temperature [J].
Chesterfield, RJ ;
McKeen, JC ;
Newman, CR ;
Ewbank, PC ;
da Silva, DA ;
Brédas, JL ;
Miller, LL ;
Mann, KR ;
Frisbie, CD .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (50) :19281-19292
[5]   n-type building blocks for organic electronics: A homologous family of fluorocarbon-substituted thiophene oligomers with high carrier mobility [J].
Facchetti, A ;
Mushrush, M ;
Katz, HE ;
Marks, TJ .
ADVANCED MATERIALS, 2003, 15 (01) :33-+
[6]   High mobility n-channel organic thin-film transistors and complementary inverters -: art. no. 064502 [J].
Gundlach, DJ ;
Pernstich, KP ;
Wilckens, G ;
Grüter, M ;
Haas, S ;
Batlogg, B .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (06)
[7]  
Horowitz G, 1998, ADV MATER, V10, P365, DOI 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO
[8]  
2-U
[9]   A soluble and air-stable organic semiconductor with high electron mobility [J].
Katz, HE ;
Lovinger, AJ ;
Johnson, J ;
Kloc, C ;
Siegrist, T ;
Li, W ;
Lin, YY ;
Dodabalapur, A .
NATURE, 2000, 404 (6777) :478-481
[10]   Recent progress in organic electronics: Materials, devices, and processes [J].
Kelley, TW ;
Baude, PF ;
Gerlach, C ;
Ender, DE ;
Muyres, D ;
Haase, MA ;
Vogel, DE ;
Theiss, SD .
CHEMISTRY OF MATERIALS, 2004, 16 (23) :4413-4422