Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

被引：98

作者：

Shimada, T ^{[1
]}

Sugai, T

Ohno, Y

Kishimoto, S

Mizutani, T

Yoshida, H

Okazaki, T

Shinohara, H

机构：

[1] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan

[2] Nagoya Univ, Dept Chem, Japan Sci & Technol Agcy, CREST, Nagoya, Aichi 4648602, Japan

[3] Nagoya Univ, Inst Adv Res, Nagoya, Aichi 4648602, Japan

[4] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 13期

关键词：

D O I：

10.1063/1.1689404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double-wall carbon nanotubes (DWNTs) have been used as channels of field-effect transistors (FETs) to obtain information on their transport characteristics. DWNTs-FETs show metallic or semiconducting behavior depending on the-tube diameters. All the semiconducting DWNTs have exhibited both p- and n-type characteristics, the so-called ambipolar behavior which is absent in normal SWNTs-FETs. Comparisons between the subthreshold swing (S) factor of DWNTs and that of SWNTs indicate that DWNTs are better FET channels than SWNTs. (C) 2004 American Institute of Physics.

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页码：2412 / 2414

页数：3

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