How to distinguish the Raman modes of epitaxial GaN with photon features from sapphire substrate - Optical properties of GaN film grown by metalorganic chemical vapor deposition - Comment

被引：10

作者：

Feng, ZC

Schurman, M

Stall, RA

机构：

[1] EMCORE Research Laboratory, Somerset

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.580759

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present correct assignments to the Raman spectrum of an epitaxial hexagonal GaN film grown on (0001) sapphire, published by Zhang et al. [J. Vac. Sci. Technol. A 14, 840 (1996)]. These assignments are supported by our additional polarization and incident angle-varied Raman measurements. A method to distinguish the Raman features of the epitaxial GaN thin layer from those of the sapphire substrate is presented. (C) 1997 American Vacuum Society.

引用

页码：2428 / 2430

页数：3

共 6 条

[1]

AZUHATA T, 1995, J PHYS CONDENS MATT, V7, P1129

[2]

FENG ZC, IN PRESS APPL OPT

[3] RAMAN EFFECT OF CORUNDUM [J].

PORTO, SPS ;

KRISHNAN, RS .

JOURNAL OF CHEMICAL PHYSICS, 1967, 47 (03) :1009-+

[4] GAN, AIN, AND INN - A REVIEW [J].

STRITE, S ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266

[5] INVESTIGATION OF N-TYPE AND P-TYPE DOPING OF GAN DURING EPITAXIAL-GROWTH IN A MASS-PRODUCTION SCALE MULTIWAFER-ROTATING-DISK REACTOR [J].

YUAN, C ;

SALAGAJ, T ;

GURARY, A ;

THOMPSON, AG ;

KROLL, W ;

STALL, RA ;

HWANG, CY ;

SCHURMAN, M ;

LI, Y ;

MAYO, WE ;

LU, Y ;

KRISHNANKUTTY, S ;

SHMAGIN, IK ;

KOLBAS, RM ;

PEARTON, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (05) :2075-2080

[6] Optical properties of GaN film grown by metalorganic chemical vapor deposition [J].

Zhang, R ;

Yang, K ;

Qin, LH ;

Shen, B ;

Shi, HT ;

Shi, Y ;

Gu, SL ;

Zheng, YD ;

Huang, ZC ;

Chen, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :840-843

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