Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure

被引：131

作者：

Yanagi, H

Ueda, K

Ohta, H

Orita, M

Hirano, M

Hosono, H

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Japan Sci & Technol Corp, ERATO, Hosono Transparent ElectroAct Mat, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

SOLID STATE COMMUNICATIONS | 2002年 / 121卷 / 01期

关键词：

transparent conducting oxides; homojunction; pulsed laser deposition (PLD);

D O I：

10.1016/S0038-1098(01)00439-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A transparent homojunction was fabricated with a successive deposition of p- and n-type electronic conductive CuInO2 delafossite-type oxide films by a pulsed laser deposition technique. Each conductivity was realized by doping of Sn4+ ions as donor or Ca2+ ions as acceptor ions. The diode, composed of the p-n homojunction sandwiched by ITO films as anode and cathode, exhibits rectifying characteristics with a turn-on voltage of similar to1.8 V, keeping an optical transmission of 60%-80% in the visible region (its total thickness: 1.8 mum). (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：15 / 17

页数：3

共 18 条

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Chrisey D. B., 1994, PULSED LASER DEPOSIT

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