共 16 条
Correspondence of the sign change in organic magnetoresistance with the onset of bipolar charge transport
被引:37
作者:

Bloom, F. L.
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机构:
Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands

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Kemerink, M.
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Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands

Koopmans, B.
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Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands
机构:
[1] Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands
关键词:
charge exchange;
electroluminescence;
magnetoresistance;
organic semiconductors;
D O I:
10.1063/1.3059555
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
In this work we examine the transition between positive and negative organic magnetoresistance in poly[2-methoxy-5-(3('), 7(')-dimethyloctyloxy)-p-phenylenevinylene] in order to understand how different regimes of charge transport affect the organic magnetoresistance effect. To characterize the charge transport in these devices we measured the current, low frequency differential capacitance, and electroluminescence efficiency as a function of voltage. These measurements show that the sign change of the magnetoresistance corresponds with a change from a unipolar diffusive transport below the built in voltage (V(bi)) to a regime of bipolar drift transport above V(bi).
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