Magnetoresistance and efficiency measurements of Alq3-based OLEDs

被引：292

作者：

Desai, Pratik

Shakya, P.

Kreouzis, T.

Gillin, W. P.

Morley, N. A.

Gibbs, M. R. J.

机构：

[1] Univ London, Dept Phys, London E1 4NS, England

[2] Univ Sheffield, Dept Mat Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.75.094423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetoresistance and efficiency measurements of indium tin oxide/N,N-'-diphenyl-N,N-' bis(3-methylphenyl)-(1,1(')-biphenyl)-4,4(') diamine/aluminum tris(8-hydroxyquinoline)/cathode organic light-emitting diode structures have been made as a function of magnetic field and cathode type. It has been found that magnetoresistance occurs only when there is light emission from the devices, which suggests that the magnetoresistance is related to exciton formation. Comparison of the effects of applied field on device efficiency and magnetoresistance shows that the magnetoresistance cannot be due to the recombination current. We suggest that the effect may be due to trapping of charge carriers at triplet excitons within the device.

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页数：5

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