Maskless selective epitaxy of InxGa1-xAs using low-energy In0.15Ga0.85-FIB and As4 molecular beam

In this study. We have demonstrated maskless selective epitaxy (MLSE) of InxGa1-xAs on Gas substrate using a low-energy In0.15lGa0.85-FIB and an As, molecular beam. We used an In0.15Ga0.85, liquid alloy ion source (LAIS) as a source of the group III. Investigations of the In composition on the InxGa1-xAs maskless selective epitaxial layers using AES showed that as the T-LIAS was raised, the In composition of the films increased. At T-LIAS of - 350 degrees C, it was similar to the original source composition (similar to In-0.15). Single crystal InxGa1-xAs films were obtained above T-s of 550 degrees C at E-i = 50 eV and below E-i of 200 eV at T-s = 600 degrees C. (C) 1999 Elsevier Science B.V. All rights reserved.