Creation of P-b interface defects in thermal Si/SiO2 through annealing - Comment - Reply

被引：3

作者：

Stesmans, A

Afanas'ev, VV

机构：

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 15期

关键词：

111; SI-SIO2; INTERFACE; DISSOCIATION KINETICS; DIPOLAR INTERACTIONS; CENTERS;

D O I：

10.1088/0953-8984/9/15/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Regarding the electron spin resonance work (Stesmans and Afanas'ev (1996) J. Phys.: Condens. Matter 8 L505) reporting on a newly resolved P-b interface defect generation mechanism operative during postoxidation annealing in inert ambient above similar to 640 degrees C, Stathis (J. Phys.: Condens. Matter 9 3297) criticizes that no explanation has been offered for this finding vis-a-vis apparently deviating previous work. Additionally, it is insinuated that previous crucial P-b results have been obtained only after postoxidation annealing. We show these comments to be based on the overlooking of plain experimental facts.

引用

页码：3299 / 3301

页数：3

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