ATOMIC-HYDROGEN REACTIONS WITH P(B) CENTERS AT THE (100) SI/SIO2 INTERFACE

被引：159

作者：

STATHIS, JH

CARTIER, E

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.72.2745

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, P(b0) and P(b1), are either passivated or produced by atomic hydrogen, depending on the starting density. However, the two defects possess quantitative differences in behavior. The P(b0) center can be produced more readily than P(b1) and it is also much harder to passivate by atomic hydrogen. These differences between P(b0) and P(b1) help to explain previous observations of P(b0) center generation by radiation and by electrical stress.

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页码：2745 / 2748

页数：4

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