THEORY OF THE PB CENTER AT THE [111] SI/SIO2 INTERFACE

[1] Abragam A., 1970, ELECT PARAMAGNETIC R

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[3] EFFECTS OF ELECTRON-ELECTRON CORRELATIONS ON DEFECT AND INTERFACE STATES IN AMORPHOUS SI AND SIO2 SYSTEMS [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 879 - 885

[4] DANGLING BOND IN A SI-H [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2203 - 2206

[5] BERNHOLC J, 1984, J ELECTRON MATER A, V14, P781

[6] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 33 (05): : 3006 - 3011

[7] GROUND-STATES OF MOLECULES .25. MINDO-3 - IMPROVED VERSION OF MINDO SEMIEMPIRICAL SCF-MO METHOD [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1975, 97 (06) : 1285 - 1293

[8] UNRESTRICTED OPEN-SHELL CALCULATIONS BY MINDO-3 - GEOMETRIES AND ELECTRONIC-STRUCTURE OF RADICALS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1976, 98 (22) : 6844 - 6849

[9] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON [J]. PHYSICAL REVIEW B, 1982, 26 (11): : 6040 - 6052

[10] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[1] Abragam A., 1970, ELECT PARAMAGNETIC R

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[3] EFFECTS OF ELECTRON-ELECTRON CORRELATIONS ON DEFECT AND INTERFACE STATES IN AMORPHOUS SI AND SIO2 SYSTEMS [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 879 - 885

[4] DANGLING BOND IN A SI-H [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2203 - 2206

[5] BERNHOLC J, 1984, J ELECTRON MATER A, V14, P781

[6] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 33 (05): : 3006 - 3011

[7] GROUND-STATES OF MOLECULES .25. MINDO-3 - IMPROVED VERSION OF MINDO SEMIEMPIRICAL SCF-MO METHOD [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1975, 97 (06) : 1285 - 1293

[8] UNRESTRICTED OPEN-SHELL CALCULATIONS BY MINDO-3 - GEOMETRIES AND ELECTRONIC-STRUCTURE OF RADICALS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1976, 98 (22) : 6844 - 6849

[9] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON [J]. PHYSICAL REVIEW B, 1982, 26 (11): : 6040 - 6052

[10] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113