CURRENT-INDUCED HYDROGEN MIGRATION AND INTERFACE TRAP GENERATION IN ALUMINUM SILICON DIOXIDE SILICON CAPACITORS

[1] RADIATION-INDUCED TRAPPING CENTERS IN THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 40 (1-3) : 31 - 47

[2] AITKEN JM, 1980, ELECTRICAL MAGNETIC

[3] STANDARDIZED TERMINOLOGY FOR OXIDE CHARGES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) : 606 - 608

[4] STANDARDIZED TERMINOLOGY FOR OXIDE CHARGES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 979 - 981

[5] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[6] Feigl F. J., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P104

[7] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[8] FEIGL FJ, 1983, MATERIALS PROCESS CH, V6, P147

[9] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3129 - 3135

[10] MONTE-CARLO STUDIES OF THE ELECTRON-MOBILITY IN SIO2 [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (01): : 349 - 358

[1] RADIATION-INDUCED TRAPPING CENTERS IN THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 40 (1-3) : 31 - 47

[2] AITKEN JM, 1980, ELECTRICAL MAGNETIC

[3] STANDARDIZED TERMINOLOGY FOR OXIDE CHARGES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) : 606 - 608

[4] STANDARDIZED TERMINOLOGY FOR OXIDE CHARGES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 979 - 981

[5] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[6] Feigl F. J., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P104

[7] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[8] FEIGL FJ, 1983, MATERIALS PROCESS CH, V6, P147

[9] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3129 - 3135

[10] MONTE-CARLO STUDIES OF THE ELECTRON-MOBILITY IN SIO2 [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (01): : 349 - 358