Direct fine-patterning of PZT thin films using photosensitive gel films derived from chemically modified metal-alkoxides

被引：29

作者：

Tohge, N ^{[1
]}

Takama, Y ^{[1
]}

机构：

[1] Kinki Univ, Dept Met Engn, Osaka 5778502, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1999年 / 10卷 / 04期

关键词：

D O I：

10.1023/A:1008916600407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A direct fine-patterning process using photosensitive gel films derived from chemically modified metal-alkoxides has been applied to PbZr0.52Ti0.48O3 (PZT) ferroelectric thin films. The gel films derived from Zr- and Ti-butoxides modified with benzoylacetone and lead acetate showed an absorption band at around 360 nm, characteristic of the pi-pi* transition of remaining chelate rings. The irradiation of the gel films with UV-light corresponding to this band dissociated the chelate rings and simultaneously decreased the solubility of these gel films in acidic aqueous solutions or alcohols. On the basis of this finding, fine-patterns of PZT ferroelectric thin films of several micrometers were directly formed on Pt/Ti/Si substrates through the subsequent processes of UV-irradiation through a mask, leaching and heat-treatment for crystallization. The present fine-patterning process was confirmed to have little affect on the ferroelectric properties of the patterned PZT thin films.

引用

页码：273 / 277

页数：5

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