FINE-PATTERNING OF ZRO2 THIN-FILMS BY THE PHOTOLYSIS OF CHEMICALLY-MODIFIED GEL FILMS

被引：58

作者：

SHINMOU, K ^{[1
]}

TOHGE, N ^{[1
]}

MINAMI, T ^{[1
]}

机构：

[1] KINKI UNIV, DEPT MET ENGN, OSAKA, OSAKA 577, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 8B期

关键词：

FINE PATTERNING; SOL-GEL PROCESS; CHEMICAL MODIFICATION; PHOTOLYSIS; ZRO2; THIN FILM;

D O I：

10.1143/JJAP.33.L1181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of UV irradiation on the properties of gel films prepared from Zr-n-butoxides modified with acetylacetone (AcAc) have been studied. The irradiation with UV light corresponding to the pi-pi* transition in the chelate ring of AcAc was found to dissociate the chelate bonds in the gel films and simultaneously decrease the solubility of these gel films in acidic solutions. This finding was applied to the patterning of ZrO2 thin films; a gel film was irradiated through a mask, leached in an acidic solution, and heat-treated. Through the process above, finely patterned ZrO2 films were fabricated on various substrates.

引用

页码：L1181 / L1184

页数：4

共 15 条

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