共 18 条
[1]
P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1989, 28 (12)
:L2112-L2114
[2]
ZnO diode fabricated by excimer-laser doping
[J].
APPLIED PHYSICS LETTERS,
2000, 76 (22)
:3257-3258
[4]
Optically pumped lasing of ZnO at room temperature
[J].
APPLIED PHYSICS LETTERS,
1997, 70 (17)
:2230-2232
[7]
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
[J].
PHYSICAL REVIEW B,
1998, 58 (19)
:12899-12907
[9]
p-type electrical conduction in ZnO thin films by Ga and N codoping
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1999, 38 (11A)
:L1205-L1207
[10]
Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN
[J].
PHYSICAL REVIEW B,
2000, 61 (08)
:5353-5357