Modeling semiconductor amplifiers and lasers: from microscopic physics to device simulation

被引：21

作者：

Moloney, JV ^{[1
]}

Indik, RA

Hader, J

Koch, SW

机构：

[1] Univ Arizona, Dept Math, Arizona Ctr Math Sci, Tucson, AZ 85721 USA

[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1999年 / 16卷 / 11期

关键词：

D O I：

10.1364/JOSAB.16.002023

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We combine the results of full many-body band-structure calculations of the semiconductor optical response and a full space-time-resolved laser propagation model. Two quantum-well structures are chosen, one showing a sharp increase of the linewidth enhancement factor with density; the other, a clamping of this factor with increasing density. The average far-field broadening of two weakly turbulent broad-area high-power semiconductor lasers is shown to be quite different for the two structures. (C) 1999 Optical Society of America [S0740-3224(99)00211-8].

引用

页码：2023 / 2029

页数：7

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