Proton damage in advanced laser diodes

被引：28

作者：

Johnston, AH ^{[1
]}

Miyahira, TF ^{[1
]}

Rax, BG ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期

关键词：

laser diodes; proton damage; radiation effects;

D O I：

10.1109/23.983128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

\Proton radiation damage in laser diodes is investigated for several types of laser diodes with wavelengths from 650 to 1550 mu. Key parameters include slope efficiency, threshold current, and the transition characteristics between laser-emitting diode (LED) and laser operation. Some of the devices exhibited nonlinear relationships between threshold current and proton fluence. All of the lasers, including vertical-cavity surface-emitting lasers, were strongly affected by recombination-enhanced annealing, in contrast to double-heterojunction LEDs, which are only slightly affected by annealing. Analysis of laser characteristics after irradiation showed that the main effect of radiation damage is an increase in bulk recombination that increases loss within the laser cavity.

引用

页码：1764 / 1772

页数：9

共 28 条

[1] OPTICAL GAIN IN A STRAINED-LAYER QUANTUM-WELL LASER [J].