Fabrication of photonic crystals using a spin-coated hydrogen silsesquioxane hard mask

被引:23
作者
O'Faolain, L [1 ]
Kotlyar, MV [1 ]
Tripathi, N [1 ]
Wilson, R [1 ]
Krauss, TF [1 ]
机构
[1] Univ St Andrews, Sch Phys & Astron, Ultrafast Photon Collaborat, St Andrews KY16 9SS, Fife, Scotland
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 01期
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1116/1.2164850
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a method for creating a hard mask for the dry etching of microphotonic structures and devices. We demonstrate that spin-on glass [hydrogen silsesquioxane (HSQ)] has sufficient dry etch resistance to allow the creation of high-quality, deeply etched photonic crystals. Furthermore, HSQ is a more favorable hard mask for the creation of active devices than plasma-enhanced chemical-vapor deposition (PECVD) silica, as less damage is incurred. It is also an economic and convenient replacement for PEVCD in photonic crystal fabrication. We examine this method and show that it can create photonic crystals of equivalent quality to those created using PEVCD masking. (c) 2006 American Vacuum Society.
引用
收藏
页码:336 / 339
页数:4
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